Fused Aromatic Network Structures: Fused Aromatic Network with Exceptionally High Carrier Mobility (Adv. Mater. 9/2021)

In article number 2004707, Joon Hak Oh, Jong-Beom Baek, and co-workers report the design synthesis of fused aromatic network structures with C5N basal plane stoichiometry. Thin films cast onto silicon dioxide substrates from solution exhibit ambipolar charge transport extraordinary high electron hole mobilities in field-effect transistor (FET) devices, superior to performance most pristine organic materials without doping.